High temperature performance of dielectrically isolated LDMOSFET: characterization, simulation and analysis

Abstract

The temperature dependence of the static parameters of the 550 V RESURF DI LDMOSFET is reported. High temperature measurements were carried out from 25/spl deg/C-200/spl deg/C at intervals of 25/spl deg/C. The parameters measured include the on-resistance, threshold voltage, transconductance, effect of substrate bias, breakdown voltage and leakage current. Accurate analytic models, supported by extensive two-dimensional numerical simulations, have been developed to explain and predict device performance.