Extended titanium nitride gate field-effect transistor with PVC selective membrane for hydrogen and potassium ion detection

Hau-Cheng Wang, Tsung-Cheng Chen, Hao Yang, P. Juan, Chia‐Ming Yang, Chao‐Sung Lai
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Abstract

A 50 nm-thick TiN sensing membrane with nitrogen (N2) ratio modification was firstly used in EGFET for pH sensing. The highest pH sensitivity of 61 mV/pH with linearity of 99.9% could be found in N2 to N2+Ar ratio of 20%. Similar performance could be maintained at least for 250 days. With additional PVC selective membrane of K+ ionophore, sensitivity could be increased to 48.7mV/pK. This developed TiN EGFET could be a potential candidate for pH and pK sensing application.
扩展的氮化钛栅极场效应晶体管与PVC选择膜用于氢和钾离子检测
在EGFET中首次采用氮(N2)比例改性的50 nm厚TiN传感膜进行pH传感。当N2+Ar比为20%时,灵敏度为61 mV/pH,线性度为99.9%。类似的性能至少可以维持250天。添加K+离子载体的PVC选择性膜,灵敏度可提高至48.7mV/pK。这一开发的TiN EGFET可能是pH和pK传感应用的潜在候选者。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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