Circuit Techniques For An 8-ns Ecl 100K Compatible 3.3v 16mb Bicmos Sram With Minimum Operation Voltage Of 2.3v

T. Akioka, S. Yukutake, K. Fukui, K. Mitsumoto, A. Hiraishi, K. Nakagawa, N. Akiyama, M. Iwamura, Y. Kobayashi, S. Ikeda, H. Uchida
{"title":"Circuit Techniques For An 8-ns Ecl 100K Compatible 3.3v 16mb Bicmos Sram With Minimum Operation Voltage Of 2.3v","authors":"T. Akioka, S. Yukutake, K. Fukui, K. Mitsumoto, A. Hiraishi, K. Nakagawa, N. Akiyama, M. Iwamura, Y. Kobayashi, S. Ikeda, H. Uchida","doi":"10.1109/VLSIC.1994.586241","DOIUrl":null,"url":null,"abstract":"We describe new circuit techniques for an 8-11s ECL compatible 16Mb BiCMOS SRAM. This is the first reported implementation of ECL lOOK U0 compatibility with an operation voltage of less than 3.0V. We developed an ECL reference circuit that operates with a 2.3V supply voltage. A novel hierarchically divided common-emitter sense circuit reduces the delay due to long data lines to achieve a simulated address access time of 8ns under typical operating conditions.","PeriodicalId":350730,"journal":{"name":"Proceedings of 1994 IEEE Symposium on VLSI Circuits","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE Symposium on VLSI Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.1994.586241","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

Abstract

We describe new circuit techniques for an 8-11s ECL compatible 16Mb BiCMOS SRAM. This is the first reported implementation of ECL lOOK U0 compatibility with an operation voltage of less than 3.0V. We developed an ECL reference circuit that operates with a 2.3V supply voltage. A novel hierarchically divided common-emitter sense circuit reduces the delay due to long data lines to achieve a simulated address access time of 8ns under typical operating conditions.
最小工作电压为2.3v的8ns Ecl 100K兼容3.3v 16mb Bicmos Sram的电路技术
我们描述了一个8-11秒ECL兼容的16Mb BiCMOS SRAM的新电路技术。这是首次报道的工作电压低于3.0V的ECL lOOK 0兼容实现。我们开发了一个ECL参考电路,工作在2.3V电源电压下。一种新型的分层共发射极感测电路减少了由于长数据线造成的延迟,在典型工作条件下实现了8ns的模拟地址访问时间。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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