Evidence for the Antisite Defect B/sub As/ in Si and B Co-Implanted and B Implanted Undoped Si Lec-Gaas Crystal

Abstract

Optical and electrical properties of undoped SI-LEC GaAs wafers implanted with B and co-implanted with B and Si have been investigated by photolurninescence (PL) spectrum and Van de Pauw measurements. All the experimental results indicated that boron can present as acceptor B/sub As/ and both the 1.436 and 1.317eV bands in PL spectra are related to antisite defect B/sub As/. The 1.317eV band is assumed to correspond to the (Si/sub Ga/ -B/sub As/) complex radiative recombination.