{"title":"An Energy Efficient CMOS Sub-THz Interconnect with Surface Plasmonic Converter and Oscillator","authors":"Yuan Liang, Guangyin Feng, Xiaojian Fu, Hao Yu","doi":"10.1145/2967446.2967456","DOIUrl":null,"url":null,"abstract":"Free-space EM-wave based GHz interconnect suffering significant loss and narrow bandwidth cannot be deployed as low-power and dense I/Os for future network-on-chip (NoC) integration of many-core and memory. This paper proposes an energy-efficient and low-crosstalk sub-THz (0.1T-1T) I/O using surface-plasmonic based interconnects and oscillator in CMOS. By introducing sub-wavelength periodic corrugation structure onto transmission line with gradient groove, the surface-plasmonic is established to propagate signal that is strongly localized on surface of top-layer metal wire. A mode conversion from guided wave to surface wave is carefully designed considering low loss and efficient impedance/momentum matching at mm-wave to THz frequencies. As such, significant power saving and cross-talk reduction can be observed with high communication bandwidth. In addition, a low phase noise surface-plasmonic oscillator with high-Q resonator is also proposed. The phase noise is -116dBc/Hz at 10MHz offset under 0.7V power supply by consuming only 3.5mW power. As designed in 65nm CMOS, the results have shown that the proposed surface-plasmonic I/O interface achieves 25Gbps data rate and 0.01pJ/bit/mm energy efficiency at 140GHz carrier frequency over 20mm dual surface-plasmonic channels.","PeriodicalId":281609,"journal":{"name":"Proceedings of the 3rd ACM International Conference on Nanoscale Computing and Communication","volume":"315 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 3rd ACM International Conference on Nanoscale Computing and Communication","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2967446.2967456","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Free-space EM-wave based GHz interconnect suffering significant loss and narrow bandwidth cannot be deployed as low-power and dense I/Os for future network-on-chip (NoC) integration of many-core and memory. This paper proposes an energy-efficient and low-crosstalk sub-THz (0.1T-1T) I/O using surface-plasmonic based interconnects and oscillator in CMOS. By introducing sub-wavelength periodic corrugation structure onto transmission line with gradient groove, the surface-plasmonic is established to propagate signal that is strongly localized on surface of top-layer metal wire. A mode conversion from guided wave to surface wave is carefully designed considering low loss and efficient impedance/momentum matching at mm-wave to THz frequencies. As such, significant power saving and cross-talk reduction can be observed with high communication bandwidth. In addition, a low phase noise surface-plasmonic oscillator with high-Q resonator is also proposed. The phase noise is -116dBc/Hz at 10MHz offset under 0.7V power supply by consuming only 3.5mW power. As designed in 65nm CMOS, the results have shown that the proposed surface-plasmonic I/O interface achieves 25Gbps data rate and 0.01pJ/bit/mm energy efficiency at 140GHz carrier frequency over 20mm dual surface-plasmonic channels.