An Energy Efficient CMOS Sub-THz Interconnect with Surface Plasmonic Converter and Oscillator

Yuan Liang, Guangyin Feng, Xiaojian Fu, Hao Yu
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Abstract

Free-space EM-wave based GHz interconnect suffering significant loss and narrow bandwidth cannot be deployed as low-power and dense I/Os for future network-on-chip (NoC) integration of many-core and memory. This paper proposes an energy-efficient and low-crosstalk sub-THz (0.1T-1T) I/O using surface-plasmonic based interconnects and oscillator in CMOS. By introducing sub-wavelength periodic corrugation structure onto transmission line with gradient groove, the surface-plasmonic is established to propagate signal that is strongly localized on surface of top-layer metal wire. A mode conversion from guided wave to surface wave is carefully designed considering low loss and efficient impedance/momentum matching at mm-wave to THz frequencies. As such, significant power saving and cross-talk reduction can be observed with high communication bandwidth. In addition, a low phase noise surface-plasmonic oscillator with high-Q resonator is also proposed. The phase noise is -116dBc/Hz at 10MHz offset under 0.7V power supply by consuming only 3.5mW power. As designed in 65nm CMOS, the results have shown that the proposed surface-plasmonic I/O interface achieves 25Gbps data rate and 0.01pJ/bit/mm energy efficiency at 140GHz carrier frequency over 20mm dual surface-plasmonic channels.
具有表面等离子体变换器和振荡器的高能效CMOS亚太赫兹互连
基于自由空间em波的GHz互连存在显著损耗和窄带宽,无法部署为低功耗和密集I/ o,以用于未来的多核和内存的片上网络(NoC)集成。本文提出了一种基于表面等离子体互连和CMOS振荡器的节能低串扰sub-THz (0.1T-1T) I/O。通过在带梯度槽的传输线上引入亚波长周期波纹结构,建立了表面等离子体传播在顶层金属丝表面强局域化的信号。考虑到毫米波到太赫兹频率的低损耗和高效的阻抗/动量匹配,精心设计了导波到表面波的模式转换。因此,可以在高通信带宽下观察到显著的节能和串扰减少。此外,还提出了一种高q谐振腔的低相位噪声表面等离子体振荡器。在0.7V电源下,仅消耗3.5mW功率,相位噪声为-116dBc/Hz,偏移量为10MHz。实验结果表明,采用65nm CMOS设计的表面等离子体I/O接口在140GHz载频下,在20mm双表面等离子体通道上实现了25Gbps的数据速率和0.01pJ/bit/mm的能量效率。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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