A hybrid FinFET/SOI MOSFET

Abstract

In this paper, process/physics-based generic compact model for DG MOSFETs, UFDG (Fossum, 2004), in Spice3, combined with simulations done with the 3D numerical simulator Davinci (2003), to gain insights regarding the design and performance of this hybrid device, which we call the inverted-T FET (ITFET) because of its cross-sectional shape we used. Based on UFDG/Spice3 simulations, we also note the potential benefit of the ITFET in effecting a good design of the FinFET-CMOS 6T-SRAM cell with regard to the area-performance tradeoff.