Development of porous silica ultra low-k films for 32 nm-node interconnects and beyond

2009 IEEE International Interconnect Technology Conference Pub Date : 2009-06-01 DOI:10.1109/IITC.2009.5090358

T. Yamazaki, M. Hirakawa, T. Nakayama, H. Murakami

引用次数: 2

Abstract

Porous silica spin-on dielectrics (SOD) films with low dielectric constant (k ∼ 2.0), high Young's modulus (E ∼ 7.5 GPa), and small pores (∼ 0.2 nm) were obtained only with ultraviolet (UV) curing within 1min at 350 °C but without hydrophobic treatment process. Optimized UV curing condition and composition of precursor solution can give the low-k film applicable to 32 nm-node interconnect technology and beyond.

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用于32nm及以上节点互连的多孔二氧化硅超低钾薄膜的研制

多孔二氧化硅自旋介电体(SOD)薄膜具有低介电常数(k ~ 2.0)、高杨氏模量(E ~ 7.5 GPa)和小孔隙(~ 0.2 nm)，仅在350°C下进行紫外线(UV)固化1min，但不进行疏水处理。优化的紫外光固化条件和前驱体溶液的组成可以得到适用于32nm节点互连技术及以上的低k膜。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2009 IEEE International Interconnect Technology Conference

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