Two-dimensional simulation of the silicon nanowires thinning effect during the thermal oxidation

Abstract

The numerical simulation of the silicon nanowire (SiNW) thinning effect during the low-temperature dry thermal oxidation is carried out. For the simulation the two-dimensional mathematical model of the silicon thermal oxidation were used. It takes into account the dependence of the oxidation rate on mechanical stresses occurring in the structure and silicon dioxide nonlinear viscoelastic behavior. Obtained simulation results were compared with experimental data. The models parameters calibration was carried out.