An unified GSMBE growth model for GaInAsP on InP and GaAs

Proceedings of 8th International Conference on Indium Phosphide and Related Materials Pub Date : 1996-04-21 DOI:10.1109/ICIPRM.1996.492301

Jin-Shung Liu, Tsuen-Lin Lee, Hao-Hsiung Lin

引用次数: 0

Abstract

A GaInAsP GSMBE growth model considering an intermediate state is presented. This model is very simple and needs only two fitting parameters, k/sub In/ and k/sub Ga/, which are determined from the experimental results of In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/ on InP (0

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基于InP和GaAs的GaInAsP统一GSMBE增长模型

提出了一种考虑中间状态的GaInAsP GSMBE生长模型。该模型非常简单，只需要k/sub In/和k/sub Ga/两个拟合参数，这两个拟合参数是由In/sub 1-x/Ga/sub x/As/sub y/P/sub 1-y/在InP (0

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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