Nonlinear modeling of 4 W 12 mm multi-cell microwave power GaAs MESFET

Abstract

Based on the proposed many models for GaAs MESFET, we put forth a newly modified large-signal model for 4 W 12 mm multi-cell microwave power GaAs MESFET in this paper. The newly improved model presented here includes the analytical expressions of I/sub ds/(V/sub gs/, V/sub ds/) elements operating at microwave frequency in large signal. Also comparison with three kinds of the original formula proposed by Materka, Jastrzebski and Curtice, we found that the modified I/sub ds/ in here is more accuracy.