Analytical drain current model reproducing advanced transport models in nanoscale double-gate (DG) MOSFETs

Abstract

In this paper we extend a Double Gate (DG) MOSFET model to nanometer technology nodes in order to include the hydrodynamic and quantum mechanical effects, and we show that the final model can accurately reproduce simulation results of the advanced transport models. Template devices representative of 22nm and 16nm DG MOSFETs were used to validate the model. The final model includes the main short-channel and nanoscale effects, such as mobility degradation, channel length modulation, drain-induced barrier lowering, overshoot velocity effects and quantum mechanical effects.