SiGe-GaN Tx module using Chip Embedded Substrate in S-band

K. Kawasaki, E. Kuwata, Hidenori, Ishibashi, T. Yao, Kazuhiro Maeda, H. Shibata, Kiyoshi Ishida, M. Tsuru, K. Mori, M. Shimozawa
{"title":"SiGe-GaN Tx module using Chip Embedded Substrate in S-band","authors":"K. Kawasaki, E. Kuwata, Hidenori, Ishibashi, T. Yao, Kazuhiro Maeda, H. Shibata, Kiyoshi Ishida, M. Tsuru, K. Mori, M. Shimozawa","doi":"10.1109/RFIT49453.2020.9226211","DOIUrl":null,"url":null,"abstract":"This paper describes small size 3D structure SiGe-GaN Tx module using chip embedded substrate. In order to achieve small package size of the Tx module, the GaN device is embedded in the PCB substrate. As the SiGe device and chip inductors are mounted on the PCB substrate over the GaN device, the chip area can be reduced compared the conventional 2D structure. In addition, an area array form factor is adopted for SiGe, GaN, and Tx modules. The area of SiGe and GaN devices and Tx modules can be reduced without reducing the number of I/O ports. Utilizing the both advantages of SiGe and GaN devices, the proposed Tx module achieves a high output power over 1W and the function of phase and amplitude control. The package size of the Tx module is occupying 7⨯7mm2 including SiGe and GaN devices and two chip inductors. The Tx module achieves phase and amplitude error of less than 1.5 degrees-rms., and 0.3dB rms., and an output power of 32dBm, respectively.","PeriodicalId":283714,"journal":{"name":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"58 ","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2020-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2020 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT49453.2020.9226211","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

This paper describes small size 3D structure SiGe-GaN Tx module using chip embedded substrate. In order to achieve small package size of the Tx module, the GaN device is embedded in the PCB substrate. As the SiGe device and chip inductors are mounted on the PCB substrate over the GaN device, the chip area can be reduced compared the conventional 2D structure. In addition, an area array form factor is adopted for SiGe, GaN, and Tx modules. The area of SiGe and GaN devices and Tx modules can be reduced without reducing the number of I/O ports. Utilizing the both advantages of SiGe and GaN devices, the proposed Tx module achieves a high output power over 1W and the function of phase and amplitude control. The package size of the Tx module is occupying 7⨯7mm2 including SiGe and GaN devices and two chip inductors. The Tx module achieves phase and amplitude error of less than 1.5 degrees-rms., and 0.3dB rms., and an output power of 32dBm, respectively.
采用s波段芯片嵌入式衬底的SiGe-GaN Tx模块
本文介绍了一种采用芯片嵌入式衬底的小尺寸三维结构SiGe-GaN Tx模块。为了实现Tx模块的小封装尺寸,GaN器件被嵌入在PCB基板中。由于SiGe器件和芯片电感器安装在GaN器件之上的PCB衬底上,与传统的二维结构相比,芯片面积可以减少。此外,SiGe、GaN和Tx模块采用面积阵列形式。在不减少I/O端口数量的情况下,可以减少SiGe和GaN器件以及Tx模块的面积。利用SiGe器件和GaN器件的优势,实现了大于1W的高输出功率和相位、幅度控制功能。Tx模块的封装尺寸为7mm2,包括SiGe和GaN器件以及两个芯片电感。Tx模块相位和幅度误差小于1.5°-rms。,有效值0.3dB。输出功率分别为32dBm。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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