An integrated circuit to enable electrodeposition and amperometric readout of sensing electrodes

Abstract

This paper presents the design of an integrated circuit (IC) for (i) electrochemical deposition of sensor layers on the on-chip pad openings to form sensing electrodes, and (ii) amperometric readout of electrochemical sensors. The IC consists of two main circuit blocks: a Beta-multiplier based current reference for galvanostatic electrodeposition, and a switch-capacitor based amperometric readout circuit. The circuits are designed and simulated in a 180-nm CMOS process. The reference circuit generates a stable current of 99 nA with a temperature coefficient of 141 ppm/°C at best and 170 ppm/°C on average (across corners) over a supply voltage range of 1.2-2.4 V, and a line regulation of 0.7 %/V. The readout circuit measures current within $\pm 2\ \mu \mathrm{A}$ with 99.9% linearity and a minimum integrated input-referred noise of 0.88 pA.