Development of stacking faults in strained silicon layers

Abstract

Stacking fault (SF) defects have been shown to form in Si layers under tensile strain based in P. M. J. Maree et al. (1987) and S. W. Bedell et al. (2004). In this work, we investigate the development of SF defects in strained silicon layers grown on low-defect SiGe graded buffer layers. Si layers were grown to various thicknesses at different temperatures and the resulting SF densities are measured using a specialized etching technique as presented in S. W. Bedell et al. (2004).