Robust multi-level current-mode on-chip interconnect signaling in the presence of process variations

V. Venkatraman, W. Burleson
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引用次数: 34

Abstract

The paper presents a novel process-tolerant multi-level signaling system for on-chip interconnects. Novel multi-level driver and receiver designs are presented which are robust in the presence of process-induced parameter variation and uncertainties. Monte Carlo analyses show that the interconnect delay and total average power are normally distributed with a standard deviation of around 9.46% and 15.96% respectively for a 10 mm line in 100 nm technology. Individual parameter sensitivity analyses show that the total average power is most influenced by supply voltage and effective gate length, and delay is most influenced by interconnect resistance and capacitance. Yield of high performance and low power bins in 100 nm technology under process variations using the proposed multi-level signaling system is 36.1%, yield of high performance bins is 27.3% and yield of low power bins is 25.1% and yield of bad bins is only 11.5%.
鲁棒多级电流模式片上互连信号在存在的过程变化
本文提出了一种用于片上互连的新型进程容忍多级信令系统。提出了一种新的多级驱动和接收设计,在过程参数变化和不确定性存在的情况下具有鲁棒性。蒙特卡罗分析表明,100nm工艺下的10mm线的互连延迟和总平均功率呈正态分布,标准差分别约为9.46%和15.96%。各参数灵敏度分析表明,总平均功率受电源电压和有效栅极长度的影响最大,延迟受互连电阻和电容的影响最大。采用多级信号系统的100纳米工艺下,高性能和低功耗仓的产率为36.1%,高性能仓的产率为27.3%,低功率仓的产率为25.1%,而坏仓的产率仅为11.5%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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