A Quartic Solution Covering Freeze-out and Exhaustion in P-type Compensated Semiconductors

Abstract

The local charge neutrality condition for partially compensated P-type doubly-doped uniform equilibrium semiconductors is shown to lead to a quartic polynomial in a Z-parameter that is directly proportional to the concentration of holes. Analysis demonstrates that the problem is solvable exactly by identifying the only physically permissible root to a quartic polynomial. The unique solution for Z leads directly to analytic expressions for temperature dependent majority carrier concentration and the Fermi level.