Modeling the channel potential and threshold voltage of a fully depleted Double Gate Junctionless FET

2012 International Conference on Communications, Devices and Intelligent Systems (CODIS) Pub Date : 2012-12-01 DOI:10.1109/CODIS.2012.6422158

P. Gupta, D. Burman, J. Das, M. Brahma, H. Rahaman, P. Dasgupta

引用次数: 1

Abstract

An analytical model for the 2D potential distribution in sub-threshold regime of operation of a Double Gate Junctionless FET (DG-JL FET) structure is developed. Threshold voltage is computed by computing the minimum value of channel potential. The model predicts the threshold voltage of the device with reasonable accuracy.

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模拟全耗尽双栅无结场效应管的通道电位和阈值电压

建立了双栅无结场效应管(DG-JL FET)亚阈值区二维电势分布的解析模型。通过计算通道电位的最小值来计算阈值电压。该模型预测器件的阈值电压具有合理的精度。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

2012 International Conference on Communications, Devices and Intelligent Systems (CODIS)

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