A precise and efficient analytical method of realistic dopant fluctuations in shallow junction formation

Abstract

The paper addresses a precise and efficient analytical method of realistic dopant fluctuations in shallow junction formation. To reach the analytical method, millions of simulations are finished, and data of simulation results are analyzed. The analytical function of the method is without any additional fitting parameters and can be used to calculate the standard deviation and normalized standard deviation at different depths of the shallow junctions. And some simulation results of characteristics variation of devices are also shown in this paper.