The conversion of bulk CMOS circuits to SOI technology and its noise impact

Li-Kong Wang, H.H. Chen
{"title":"The conversion of bulk CMOS circuits to SOI technology and its noise impact","authors":"Li-Kong Wang, H.H. Chen","doi":"10.1109/VTSA.1999.786055","DOIUrl":null,"url":null,"abstract":"The faster switching speed and smaller parasitic capacitance of SOI circuits have provided 20% performance improvement over their bulk predecessors, but the characteristics of SOI circuits also introduced significant noise problems that cannot be overlooked. This paper addresses the design issues of remapping bulk CMOS circuits to the SOI technology, and discusses how to minimize the power supply noise by optimizing the placement of on-chip decoupling capacitors.","PeriodicalId":237214,"journal":{"name":"1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)","volume":"43 8","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 International Symposium on VLSI Technology, Systems, and Applications. Proceedings of Technical Papers. (Cat. No.99TH8453)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VTSA.1999.786055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

The faster switching speed and smaller parasitic capacitance of SOI circuits have provided 20% performance improvement over their bulk predecessors, but the characteristics of SOI circuits also introduced significant noise problems that cannot be overlooked. This paper addresses the design issues of remapping bulk CMOS circuits to the SOI technology, and discusses how to minimize the power supply noise by optimizing the placement of on-chip decoupling capacitors.
块体CMOS电路转换为SOI技术及其噪声影响
更快的开关速度和更小的寄生电容使SOI电路的性能比其批量前身提高了20%,但SOI电路的特性也带来了不可忽视的显著噪声问题。本文讨论了将大块CMOS电路重新映射到SOI技术的设计问题,并讨论了如何通过优化片上去耦电容器的放置来最小化电源噪声。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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