An investigation of CeO2 based ReRAM with p+ and n+-Si bottom electrodes

Abstract

In this paper we use the p⁺-Si and n⁺-Si as bottom electrode for CeO₂ based ReRAM. The work function difference between p⁺-Si and n⁺-Si substrate gives out an about 0.6 V shift of the set and reset voltage. The mechanism of this shift was investigated and the set and reset of voltage with pulse width dependence was also concerned depends on p⁺-Si substrate.