J. Ollikainen, M. Kaltiokallio, K. Stadius, V. Saari, J. Ryynanen
{"title":"A wideband interference tolerant RF receiver for cognitive radio sensor unit","authors":"J. Ollikainen, M. Kaltiokallio, K. Stadius, V. Saari, J. Ryynanen","doi":"10.1109/NORCHP.2009.5397827","DOIUrl":null,"url":null,"abstract":"A wideband receiver for cognitive radio spectrum sensing unit is presented. The circuit consists of a high linearity low noise amplifier, passive mixer, and baseband buffer. IQ signals for the LO are generated using a divide-by-two circuit. Low noise amplifier includes common-gate common-source combination for simultaneous interference suppression and noise canceling. The receiver operates in the LTE bands at 0.7 - 2.6 GHz, with typical performance of 32 dB gain, 5 dB noise figure, and IIP3 linearity between 5 dBm and -1 dBm in the LTE bandwidth. The circuit is designed for 65-nm CMOS technology.","PeriodicalId":308859,"journal":{"name":"2009 NORCHIP","volume":" 9","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 NORCHIP","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NORCHP.2009.5397827","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
A wideband receiver for cognitive radio spectrum sensing unit is presented. The circuit consists of a high linearity low noise amplifier, passive mixer, and baseband buffer. IQ signals for the LO are generated using a divide-by-two circuit. Low noise amplifier includes common-gate common-source combination for simultaneous interference suppression and noise canceling. The receiver operates in the LTE bands at 0.7 - 2.6 GHz, with typical performance of 32 dB gain, 5 dB noise figure, and IIP3 linearity between 5 dBm and -1 dBm in the LTE bandwidth. The circuit is designed for 65-nm CMOS technology.