A PAM-4 100 Gbps Single-Drive Strained SiGe Optical Lumped Mach-Zehnder Modulator for O-Band Application

IF 2.2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Quantum Electronics Pub Date : 2023-09-25 DOI:10.1109/JQE.2023.3318587

Youngjoo Bae;Seong Ui An;Taewon Jin;Younghyun Kim

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引用次数: 0

Abstract

We propose the carrier-depletion type strained SiGe optical lumped Mach-Zehnder modulators (MZMs) with L-shape PN junction (LSPN) with a highly CMOS-compatible fabrication method. The device performance is numerically investigated and optimized by technology computer-aided design (TCAD) simulation. The optimized SiGe LSPN MZ modulator exhibits a high modulation efficiency of 0.52 Vcm for

$V_{\pi }L$

with reverse bias voltages of 0V to −2V at 1310 nm wavelength, which is 3.5 times smaller than the conventional PN junction device thanks to strained SiGe. Furthermore, we carried out the large-signal simulation with 1-mW input power. As a result, we found that the SiGe LSPN MZ modulator can achieve 0.54 mW (−2.7 dBm) and 0.17 mW (−7.7 dBm) eye-openings for 50-Gbps NRZ-OOK and 100-Gbps PAM-4, respectively, taking advantage of single-drive configuration and optimizing input characteristics impedance. We expect this SiGe lumped MZ modulator can be one of the promising solutions for replacing a very long Si MZ modulator with traveling-wave electrodes.

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PAM-4 100 Gbps单驱动应变SiGe光集总马赫-曾德调制器的o波段应用

我们提出了一种具有l形PN结(LSPN)的载流子耗尽型应变SiGe光学集总马赫-曾德尔调制器(MZMs)，该调制器具有高度兼容cmos的制造方法。采用计算机辅助设计(TCAD)仿真技术对器件性能进行了数值研究和优化。优化后的SiGe LSPN MZ调制器在1310 nm波长下具有0.52 Vcm的高调制效率，反向偏置电压为0V至- 2V，比传统PN结器件小3.5倍。此外，我们还以1 mw的输入功率进行了大信号仿真。因此，我们发现SiGe LSPN MZ调制器在50-Gbps NRZ-OOK和100-Gbps PAM-4上分别可以实现0.54 mW(−2.7 dBm)和0.17 mW(−7.7 dBm)的孔径，利用单驱动配置和优化输入特性阻抗。我们期望这种SiGe集总MZ调制器可以成为用行波电极代替超长Si MZ调制器的有前途的解决方案之一。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.70

自引率

4.00%

发文量

审稿时长

3.0 months

期刊介绍： The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.