Solar-Blind Deep UV Avalanche Photodetectors Using Reduced Area Epitaxy

IF 2.2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of Quantum Electronics Pub Date : 2023-10-23 DOI:10.1109/JQE.2023.3325254

Lakshay Gautam;Junhee Lee;Michael Richards;Manijeh Razeghi

引用次数: 0

Abstract

We report high gain avalanche photodetectors operating in the deep UV wavelength regime. The high gain was leveraged through reduced area epitaxy by patterning AlN on Sapphire substrate. This helps in a substantial reduction of crack formation due to overgrowth on individually isolated AlN mesas. Reproducible gain on the order of 105 was reported for multiple diodes in different areas of

$320\times 256$

focal plane array.

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利用缩小面积外延的太阳盲深紫外雪崩光电探测器

我们报道了在深紫外波长范围内工作的高增益雪崩光电探测器。通过在蓝宝石衬底上进行AlN图案化来减小面积外延，从而实现了高增益。这有助于大大减少由于在单独隔离的AlN台地上过度生长而形成的裂纹。在$320\ × 256$焦平面阵列中，多个二极管在不同区域的可重复性增益为105数量级。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

IEEE Journal of Quantum Electronics 工程技术-工程：电子与电气

CiteScore

4.70

自引率

4.00%

发文量

审稿时长

3.0 months

期刊介绍： The IEEE Journal of Quantum Electronics is dedicated to the publication of manuscripts reporting novel experimental or theoretical results in the broad field of the science and technology of quantum electronics. The Journal comprises original contributions, both regular papers and letters, describing significant advances in the understanding of quantum electronics phenomena or the demonstration of new devices, systems, or applications. Manuscripts reporting new developments in systems and applications must emphasize quantum electronics principles or devices. The scope of JQE encompasses the generation, propagation, detection, and application of coherent electromagnetic radiation having wavelengths below one millimeter (i.e., in the submillimeter, infrared, visible, ultraviolet, etc., regions). Whether the focus of a manuscript is a quantum-electronic device or phenomenon, the critical factor in the editorial review of a manuscript is the potential impact of the results presented on continuing research in the field or on advancing the technological base of quantum electronics.