Dark current modeling of thick perovskite X-ray detectors.

IF 4.1 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Frontiers of Optoelectronics Pub Date : 2022-10-31 DOI:10.1007/s12200-022-00044-1

Shan Zhao, Xinyuan Du, Jincong Pang, Haodi Wu, Zihao Song, Zhiping Zheng, Ling Xu, Jiang Tang, Guangda Niu

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引用次数: 1

Abstract

Metal halide perovskites (MHPs) have demonstrated excellent performances in detection of X-rays and gamma-rays. Most studies focus on improving the sensitivity of single-pixel MHP detectors. However, little work pays attention to the dark current, which is crucial for the back-end circuit integration. Herein, the requirement of dark current is quantitatively evaluated as low as 10^-9 A/cm² for X-ray imagers integrated on pixel circuits. Moreover, through the semiconductor device analysis and simulation, we reveal that the main current compositions of thick perovskite X-ray detectors are the thermionic-emission current (J_T) and the generation-recombination current (J_g-r). The typical observed failures of p-n junctions in thick detectors are caused by the high generation-recombination current due to the band mismatch and interface defects. This work provides a deep insight into the design of high sensitivity and low dark current perovskite X-ray detectors.

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厚钙钛矿x射线探测器的暗电流建模。

金属卤化物钙钛矿(MHPs)在x射线和伽马射线探测方面表现出优异的性能。大多数研究都集中在提高单像素MHP探测器的灵敏度上。然而，对于后端电路集成至关重要的暗电流，研究却很少。本文定量评估了集成在像素电路上的x射线成像仪对暗电流的要求，暗电流低至10-9 A/cm2。此外，通过半导体器件分析和仿真，我们发现厚钙钛矿x射线探测器的主要电流组成是热离子发射电流(JT)和生成复合电流(Jg-r)。在厚探测器中观察到的典型p-n结失效是由带错配和界面缺陷引起的高生成复合电流引起的。这项工作为高灵敏度和低暗电流钙钛矿x射线探测器的设计提供了深入的见解。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Frontiers of Optoelectronics ENGINEERING, ELECTRICAL & ELECTRONIC-

CiteScore

7.80

自引率

0.00%

发文量

583

期刊介绍： Frontiers of Optoelectronics seeks to provide a multidisciplinary forum for a broad mix of peer-reviewed academic papers in order to promote rapid communication and exchange between researchers in China and abroad. It introduces and reflects significant achievements being made in the field of photonics or optoelectronics. The topics include, but are not limited to, semiconductor optoelectronics, nano-photonics, information photonics, energy photonics, ultrafast photonics, biomedical photonics, nonlinear photonics, fiber optics, laser and terahertz technology and intelligent photonics. The journal publishes reviews, research articles, letters, comments, special issues and so on. Frontiers of Optoelectronics especially encourages papers from new emerging and multidisciplinary areas, papers reflecting the international trends of research and development, and on special topics reporting progress made in the field of optoelectronics. All published papers will reflect the original thoughts of researchers and practitioners on basic theories, design and new technology in optoelectronics. Frontiers of Optoelectronics is strictly peer-reviewed and only accepts original submissions in English. It is a fully OA journal and the APCs are covered by Higher Education Press and Huazhong University of Science and Technology. ● Presents the latest developments in optoelectronics and optics ● Emphasizes the latest developments of new optoelectronic materials, devices, systems and applications ● Covers industrial photonics, information photonics, biomedical photonics, energy photonics, laser and terahertz technology, and more