Investigation of a minority carrier trap in a NiO/β-Ga2O3 p–n heterojunction via deep-level transient spectroscopy

待确认 10 由 qfs 发布于 2026/5/17 11:18:07

DOI:10.1088/1361-6641/acf608
作者：Haolan Qu,?Jiaxiang Chen,?Yu Zhang,?Jin-chi Sui,?Ruohan Zhang,?Junmin Zhou,?Xing Lu,?Xinbo Zou
文献类型：期刊论文
补充材料：只需要正文

IOPscience

Abstract：The properties of a minority carrier (hole) trap in β-Ga2O3 have been explicitly investigated using a NiO/β-Ga2O3 p–n heterojunction. Via deep-level transient spectroscopy, the activation en

应助信息

等待求助人确认

求助人未确认前，本求助不能再次应助。36小时后系统将自动确认应助成功。本求助将自动关闭。

1天前

华山论剑

0a3eedbf51a011f1be2334735aa3bc31.pdf

1天前

Book学术机器人

2026/5/17 11:18:07 未找到该文献，机器人已退出，请等待人工下载

2026/5/17 11:18:07 Book学术AI机器人收到请求，开始寻找文献

2026/5/17 11:18:07 已向机器人发送请求

1天前

qfs 发布求助

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:ElsevierTransplantation of encapsulated mitochondria alleviates dysfunction in mitochondrial and Parkinson's disease models.