Hot carriers assisted mixed-dimensional graphene/MoS2/p-GaN light emitting diode

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DOI:10.1016/j.carbon.2022.06.025
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1016/j.carbon.2022.06.025

Elsevier

Abstract：The exploration of two-dimensional (2D) materials in highly performance optoelectronic device is critical for the practical applications. Traditionally, GaN related semiconductors uses compl

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