Novel dynamic back-gate control technology for performance improvement in ultrathin double SOI LDMOS

已完结 10 由万俟听雨发布于 2026/10/12 10:42:18

DOI:10.1007/s43236-024-00889-z
作者：Li, M (Li, Man)
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1007/s43236-024-00889-z

Springer

Abstract：Novel performance improvement technology is developed for an ultrathin Double Silicon-on-Insulator (DSOI) Lateral Double-diffused Metal–Oxide–Semiconductor (LDMOS) with a heavy doping drift

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