High-Performance Vertical β-Ga2 O3 Schottky Barrier Diodes Featuring P-NiO JTE with Adjustable Conductivity

已完结 10 由大炮冲冲冲发布于 2026/8/14 21:05:19

DOI:10.1109/IEDM45625.2022.10019468
作者：Weibing Hao, F. Wu, Wenshen Li, Guangwei Xu, Xuan Xie, Kai Zhou, Weisi Guo, Xuanze Zhou, Qiming He, Xiaolong Zhao, Shu-Ting Yang, Shibing Long
文献类型：期刊论文
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Institute of Electrical and Electronics Engineers (IEEE)

Abstract：We demonstrate a novel conductivity-controlled junction termination extension (JTE) technique using p-type NiO – a key element for potential commercialization of Ga2 O3 power devices without

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上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:Institute of Electrical and Electronics Engineers (IEEE)NiO Junction Termination Extension for Ga2O3 Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed