NiO Junction Termination Extension for Ga2O3 Devices: High Blocking Field, Low Capacitance, and Fast Switching Speed

已完结 10 由大炮冲冲冲发布于 2026/8/14 21:05:36

DOI:10.1109/ISPSD57135.2023.10147704
作者：M. Xiao, Boyan Wang, Ruizhe Zhang, Q. Song, Joseph Spencer, Z. Du, Yuan Qin, K. Sasaki, Han Wang, M. Tadjer, Yuhao Zhang
文献类型：期刊论文
补充材料：只需要正文

Institute of Electrical and Electronics Engineers (IEEE)

Abstract：This work investigates the blocking electric field, capacitance, and switching speed of the p-type NiO based junction termination extension (JTE) for vertical Ga2O3 devices. The JTE comprise

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