High-transconductance molybdenum disulfide top-gate transistors using epitaxial interface engineering

待确认 10 由 blake 发布于 2026/9/6 18:00:37

DOI:10.1038/s41928-026-01672-7
作者：Yuan-Chun Su, Po-Sen Mao, Chih-Yao Shih, Shih-Ting Wang, Yun-Yang Shen, Zih-Siang Jian, Hsiang-Chi Hu, Wei-Chen Tseng, Hsin-Ya Sung, Chih-Yen Lin, Zi-Yun Fong, Yu-Tung Lin, Kun-An Chiu, Fong-Zhi Chen,
文献类型：期刊论文
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Nature

Abstract：High transconductance is a key performance metric in field-effect transistors, directly influencing voltage gain, switching speed and bandwidth. In two-dimensional field-effect transistors,

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