Performance Trade-Offs and Optimization of Single and Dual-Layer Passivation AlGaN/GaN HEMTs with Double-Deck Gate Field Plate

已完结 10 由 ajy 发布于 2026/3/16 16:10:35

DOI:10.1134/s1063783425603340
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1134/S1063783425603340

Springer

Abstract：This study presents a comprehensive evaluation of AlGaN/GaN-based high electron mobility transistors (HEMTs) with various passivation schemes, providing critical insights for device optimiza

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