Synergistic Work Function Modulation and Interface Traps Suppression in CuCrO2/β-Ga2O3 p-n Heterojunction Diodes through Oxygen Vacancy Passivation

已完结 10 由大炮冲冲冲发布于 2026/3/23 19:33:48

DOI:10.1016/j.jallcom.2026.186858
作者：Ying Li, Yingzhen Lin, Ze Yang, Jialong Lin, Yujian Chen, Feng Zhang, Weifeng Yang
文献类型：期刊论文
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Elsevier

Abstract：P-type oxide heterojunctions, a key strategy to overcome the intrinsic p-type doping limitations of β-Ga2O3, remain limited by pervasive interfacial and bulk defects. This work demonstrates

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