Properties of low-resistivity molybdenum metal thin film deposited by atomic layer deposition using MoO2Cl2 as precursor

已完结 10 由逗发布于 2026/1/6 15:06:46

DOI:10.1116/6.0003361
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1116/6.0003361

American Institute of Physics (AIP)

Abstract：Challenges have arisen in selecting suitable candidates for interconnects and metal contacts due to the exponential increase in metal resistivity at scaled pitches. Molybdenum (Mo) has emerg

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