Numerical investigation on the effect of growth conditions on silicon carbide growth in chemical vapor deposition

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DOI:10.1016/j.jcrysgro.2025.128108
作者：Guangyu Zheng , Yukang Sun , Simin Liu , Peng Su , Junhong Pei , Ran Zuo , Lijun Liu
文献类型：期刊论文
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Elsevier

Abstract：The growth of silicon carbide (SiC) by chemical vapor deposition (CVD) is influenced by process parameters, and the growth rate and the uniformity of film can be improved by optimizing the p

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