DUV-NIR dual-band photodetector based on Ga2O3/GaAs heterogeneous junctions

已完结 10 由 Lh 发布于 2025/11/13 15:13:36

DOI:10.1016/j.mssp.2025.109472
作者：Chenrui Shang , Rongrong Chen , Wei Mi , Jinpei Wang , Qing Li , Jinlong Liang , Xiangcan Kong , Di Wang , Lin'an He , Liwei Zhou , Zhaolong Chen ,&nb
文献类型：期刊论文
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Elsevier

Abstract：In this work, we demonstrate dual band vertical heterojunction photodetector realized by integrating Ga2O3 with n-type GaAs. For comparison, we fabricated Ga2O3/GaAs Heterogeneous junction m

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