Structural and Device Considerations for Vertical Cross Point Memory with Single-stack Memory toward CXL Memory beyond 1x nm 3DXP

已完结 10 由 shawtrum 发布于 2025/7/14 15:11:18

DOI:10.1109/IMW52921.2022.9779247
作者：Sijung Yoo, Donghoon Kim, Yoon Mo Koo, Sujee Kim Wooju Jeong, Hyungjoon Shim, Won-Jun Lee, Beomseok Lee, Seungyun Lee, Hyejung Choi, Hyung-Dong Lee, Taehoon Kim, M. Na
文献类型：期刊论文
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文献链接：https://doi.org/10.1109/IMW52921.2022.9779247

Institute of Electrical and Electronics Engineers (IEEE)

Abstract：In this paper, we propose the structure of the 3D vertical cross point memory (3DVXP) having byte-addressability and discuss the possible challenges and requirements from the structural poin

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