Material removal rate model for chemical–mechanical polishing of single-crystal SiC substrates using agglomerated diamond abrasive

已完结 10 由 kwx 发布于 2025/9/25 15:44:11

DOI:10.1016/j.precisioneng.2024.04.002
文献类型：期刊论文
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Elsevier

Abstract：Material removal mechanisms are essential for the selection of polishing slurries and parameter optimization of chemical–mechanical polishing (CMP) processes. This study established a materi

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上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:ElsevierModeling of material removal rate considering the chemical mechanical effects of lubricant, oxidant, and abrasive particles for aluminum chemical mechanical polishing at low pressure