A Flexible Low Dropout Regulator Based on InSnO Thin-Film Transistors With Superior Bending Robustness and Ultra-Low Quiescent Current

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DOI:10.1109/LED.2025.3539285
作者：Tingrui Huang;Zuoxu Yu;Yuzhen Zhang;Di Gui;Mingming Liu;Kaizhi Sui;Wenting Xu;Guangan Yang;Wangran Wu;Weifeng Sun
文献类型：期刊论文
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Institute of Electrical and Electronics Engineers (IEEE)

Abstract：In this work, a flexible low dropout regulator (LDO) based on InSnO (ITO) thin film transistors (TFTs) on a 50- $\mu $ m polyimide (PI) substrate is demonstrated for the first time. The LDO

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