Properties of low-resistivity molybdenum metal thin film deposited by atomic layer deposition using MoO2Cl2 as precursor

已完结 10 由 wuhao 发布于 2025/5/28 13:13:55

DOI:10.1116/6.0003361
作者：So Young Kim, Chunghee Jo, Hyerin Shin, D. Yoon, D. Shin, Min-ho Cheon, Kyu-beom Lee, D. Seo, Jae-wook Choi, Heungsoo Park, Dae-Hong Ko
文献类型：期刊论文
补充材料：只需要正文

American Institute of Physics (AIP)

Abstract：Challenges have arisen in selecting suitable candidates for interconnects and metal contacts due to the exponential increase in metal resistivity at scaled pitches. Molybdenum (Mo) has emerg

应助信息

求助已完结，文件已删除 如有需求请重新发布求助一键发布

感谢使用Book学术
本站所有文献仅供个人学习和参考，请勿将文件进行传播。共同遵守网站规定和相关知识产权规定。

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:American Chemical Society (ACS)CRISPR/Cas12a-Mediated Interfacial Cleaving of Hairpin DNA Reporter for Electrochemical Nucleic Acid Sensing