Quasi-atomic layer etching of Si and nitride hard mask with Cl2 based chemistry

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DOI:10.1117/12.2583647
作者：Tao Li, S. Schmitz, P. Friddle, Samantha Tan, Wenbing Yang, I. Seshadri
文献类型：期刊论文
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International Society for Optics and Photonics (SPIE)

Abstract：The ability to etch silicon highly anistropically at active fin heights of 45nm or greater is critical to fin patterning for continued CMOS scaling. Tight control of fin CD and taper is crit

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