Fabrication of full intermetallic compound interconnects with single crystal (111) Cu under bump metallization

已完结 10 由勿忘发布于 2025/2/27 13:10:53

DOI:10.1109/ICEPT56209.2022.9872691
作者：Q. Shi, Zhi-Jie Zhang, Xing Gao, Hong Wei, Xu Zhou
文献类型：期刊论文
补充材料：只需要正文

Institute of Electrical and Electronics Engineers (IEEE)

Abstract：This study focuses on the effect of single crystal (111) Cu substrate on the growth of IMC in full IMC micro-interconnects and the formation of Kirkendall voids at the interfaces in the sing

应助信息

求助已完结，文件已删除 如有需求请重新发布求助一键发布

感谢使用Book学术
本站所有文献仅供个人学习和参考，请勿将文件进行传播。共同遵守网站规定和相关知识产权规定。

上一个求助:其它数据库Naturally Fractured Carbonate Reservoir Characterization: A Case Study of a Mature High-Pour Point Oil Field in Hungary 下一个求助:Institute of Electrical and Electronics Engineers (IEEE)Effect of reflow temperature and time on the interfacial reaction of Sn-xCu/(001) Cu