Magnesium niobate as a high-κ gate dielectric for two-dimensional electronics

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DOI:10.1038/s41928-024-01245-6
作者：Cheng-Yi Zhu, Meng-Ru Zhang, Qing Chen, Lin-Qing Yue, Rong Song, Cong Wang, Hui-Zhen Li, Feichi Zhou, Yang Li, Weiwei Zhao, Liang Zhen, Mengwei Si, Jia Li, Jingli Wang, Yang Chai, Cheng-Yan Xu, Jing-K
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Abstract：Integrated circuits based on two-dimensional semiconductors require ultrathin gate insulators that can provide high interface quality and dielectric reliability, minimized electrically activ

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