Resolution of Customer Return Non-Volatile Memory Data Retention Bit Failures through Bit Map Verification and Bit Cell Characterization by Nanoprobe Analysis

已取消 10 由 Lah 发布于 2024/10/3 11:36:33

DOI:10.31399/asm.cp.istfa2021p0224
作者：Randal E. Mulder
文献类型：期刊论文
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Abstract： A major customer had been returning devices for nonvolatile memory (NVM) data retention bit failures. The ppm level was low but the continued fallout at the customer location was causing a

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