Quasi-atomic layer etching of Si and nitride hard mask with Cl2 based chemistry

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DOI:10.1117/12.2583647
文献类型：期刊论文
补充材料：只需要正文
文献链接：https://doi.org/10.1117/12.2583647

International Society for Optics and Photonics (SPIE)

Abstract：The ability to etch silicon highly anistropically at active fin heights of 45nm or greater is critical to fin patterning for continued CMOS scaling. Tight control of fin CD and taper is crit

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