Photoresists based on bisphenol A derivatives with tert-butyl ester groups for electron beam lithography

已完结 10 由徐徐发布于 2024/10/22 22:34:50

DOI:10.1016/j.jphotochem.2022.114351
作者：Shengwen Hu ,&nbsp;Jinping Chen ,&nbsp;Tianjun Yu ,&nbsp;Yi Zeng ,&nbsp;Xudong Guo ,&nbsp;Shuangqing Wang ,&nbsp;Guoqiang Yang ,&nbsp;Yi Li
文献类型：期刊论文
补充材料：只需要正文

Elsevier

Abstract：Four branched bisphenol A derivatives decorated with tert-butyl ester group (BPA-BU-n, n = 1–4) were synthesized. The number of BU groups was controlled precisely by selective hydrogenation.

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