Commercialization of MRAM – Historical and Future Perspective

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DOI:10.1109/IITC51362.2021.9537434
作者：S. Ikegawa,?F. Mancoff,?S. Aggarwal
文献类型：期刊论文
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Institute of Electrical and Electronics Engineers (IEEE)

Abstract：From data centers to IoT edge devices, data processing demands and evolution in computing drive the growing need for magnetoresistive random access memory (MRAM) because of its non-volatilit

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