Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure

已完结 10 由芽发布于 2024/11/4 19:43:49

DOI:arxiv-2407.13724
作者：Baisali KunduMaterials Science Centre, Indian Institute of Technology, Kharagpur 721302, India, Priyanka MondalMaterials Science Centre, Indian Institute of Technology, Kharagpur 721302, India2nd Inst
文献类型：期刊论文
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Abstract：Controlling excitons and their transport in two-dimensional (2D) transition metal dichalcogenides (TMDs) heterostructures is central to advancing photonics and electronics on-chip integratio

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