Electrically Controlled Interfacial Charge Transfer Induced Excitons in MoSe2-WSe2 Lateral Heterostructure

arXiv - PHYS - Mesoscale and Nanoscale Physics Pub Date : 2024-07-18 DOI:arxiv-2407.13724

Baisali KunduMaterials Science Centre, Indian Institute of Technology, Kharagpur 721302, India, Priyanka MondalMaterials Science Centre, Indian Institute of Technology, Kharagpur 721302, India2nd Institute of Physics and JARA-FIT, RWTH Aachen University, Aachen 52056, Germany, David Tebbe2nd Institute of Physics and JARA-FIT, RWTH Aachen University, Aachen 52056, Germany, Md. Nur HassanDepartment of Physics and Astronomy, Uppsala University, Uppsala 75120, Sweden, Suman Kumar ChakrabortyMaterials Science Centre, Indian Institute of Technology, Kharagpur 721302, India, Marvin MetzelaarsInstitute of Inorganic Chemistry, RWTH Aachen University, 52074 Aachen, Germany, Paul KögerlerInstitute of Inorganic Chemistry, RWTH Aachen University, 52074 Aachen, Germany, Debjani KarmakarDepartment of Physics and Astronomy, Uppsala University, Uppsala 75120, SwedenTechnical Physics Division, Bhabha Atomic Research Centre, Mumbai 400085, IndiaHomi Bhabha National Institute, Trombay, Mumbai 400094, India, Christoph Stampfer2nd Institute of Physics and JARA-FIT, RWTH Aachen University, Aachen 52056, Germany, Bernd Beschoten2nd Institute of Physics and JARA-FIT, RWTH Aachen University, Aachen 52056, Germany, Lutz Waldecker2nd Institute of Physics and JARA-FIT, RWTH Aachen University, Aachen 52056, Germany, Prasana Kumar SahooMaterials Science Centre, Indian Institute of Technology, Kharagpur 721302, India

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Abstract

Controlling excitons and their transport in two-dimensional (2D) transition metal dichalcogenides (TMDs) heterostructures is central to advancing photonics and electronics on-chip integration. We investigate the controlled generation and manipulation of excitons and their complexes in monolayer (1L) MoSe2-WSe2 lateral heterostructure (LHS), directly grown via water-assisted chemical vapor deposition. Using a field-effect transistor design by incorporating a few-layer graphene back gate, single-layer graphene edge contact and encapsulation with few-layer hexagonal boron nitride, we achieve precise electrical tuning of exciton complexes and their transfer across 1D interfaces. At cryogenic temperatures (4 K), photoluminescence and photocurrent maps reveal the synergistic effect of local electric field and interface phenomena in the modulation of excitons, trions, and free carriers. We observe spatial variations in exciton and trion densities driven by exciton-trion conversion under electrical manipulation. The first-principle density functional theory calculation reveals significant band modification at the lateral interfaces and graphene-TMDs contact region. Furthermore, we demonstrate the versatility of 2D TMDS LHS in hosting and manipulating quantum emitters, achieving precise control over narrow-band emissions through modulating carrier injection and electrical biasing. This work extends the boundary of the present understanding of excitonic behaviour within lateral heterojunctions, highlighting the potential for controlled exciton manipulation across 1D interfaces and paving the way for next-generation electro-optical quantum devices.

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电控界面电荷转移诱导 MoSe2-WSe2 侧向异质结构中的激子

控制二维（2D）过渡金属二卤化物（TMDs）异质结构中的激子及其传输是推进光子学和电子学片上集成的核心。我们研究了通过水辅助化学气相沉积直接生长的单层（1L）MoSe2-WSe2 侧面异质结构（LHS）中激子及其复合物的可控产生和操纵。通过采用几层石墨烯背栅、单层石墨烯边缘触点和几层六方氮化硼封装的场效应晶体管设计，我们实现了对激子复合物及其在一维界面上转移的精确电学调谐。在低温（4 K）条件下，光致发光和光电流图揭示了局部电场和界面现象在激子、三离子和自由载流子调制过程中的协同效应。我们观察到激子和三离子密度在电操纵下由激子-三离子转换驱动的空间变化。第一原理密度泛函理论计算显示，在横向界面和石墨烯-TMDs 接触区域存在显著的能带改变。此外，我们还展示了 2DTMDS LHS 在承载和操纵量子发射器方面的多功能性，通过调制载流子注入和电偏压实现了对窄带发射的精确控制。这项工作拓展了目前对横向异质结内激子行为的理解范围，凸显了跨一维界面控制激子操纵的潜力，并为下一代电光量子器件铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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arXiv - PHYS - Mesoscale and Nanoscale Physics

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