Quanzhen Sun , Yifan Li , Caixia Zhang , Shunli Du , Weihao Xie , Jionghua Wu , Qiao Zheng , Hui Deng , Shuying Cheng
{"title":"内掺杂协同控制后界面和本体缺陷,实现高效柔性CZTSSe太阳能电池","authors":"Quanzhen Sun , Yifan Li , Caixia Zhang , Shunli Du , Weihao Xie , Jionghua Wu , Qiao Zheng , Hui Deng , Shuying Cheng","doi":"10.1016/j.jechem.2023.10.034","DOIUrl":null,"url":null,"abstract":"<div><p>Focusing on the low open circuit voltage (<em>V</em><sub>OC</sub>) and fill factor (FF) in flexible Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> (CZTSSe) solar cells, indium (In) ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface and passivate deep level defects in CZTSSe bulk concurrently for improving the performance of flexible device. The results show that In doping effectively inhibits the formation of secondary phase (Cu(S,Se)<sub>2</sub>) and V<sub>Sn</sub> defects. Further studies demonstrate that the barrier height at the back interface is decreased and the deep level defects (Cu<sub>Sn</sub> defects) in CZTSSe bulk are passivated. Moreover, the carrier concentration is increased and the <em>V</em><sub>OC</sub> deficit (<em>V</em><sub>OC,def</sub>) is decreased significantly due to In doping. Finally, the flexible CZTSSe solar cell with 10.01% power conversion efficiency (PCE) has been obtained. The synergistic strategy of interface modification and bulk defects passivation through In incorporation provides a new thought for the fabrication of efficient flexible kesterite-based solar cells.</p></div>","PeriodicalId":67498,"journal":{"name":"能源化学","volume":"89 ","pages":"Pages 10-17"},"PeriodicalIF":14.0000,"publicationDate":"2023-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"In-doping collaboratively controlling back interface and bulk defects to achieve efficient flexible CZTSSe solar cells\",\"authors\":\"Quanzhen Sun , Yifan Li , Caixia Zhang , Shunli Du , Weihao Xie , Jionghua Wu , Qiao Zheng , Hui Deng , Shuying Cheng\",\"doi\":\"10.1016/j.jechem.2023.10.034\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><p>Focusing on the low open circuit voltage (<em>V</em><sub>OC</sub>) and fill factor (FF) in flexible Cu<sub>2</sub>ZnSn(S,Se)<sub>4</sub> (CZTSSe) solar cells, indium (In) ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface and passivate deep level defects in CZTSSe bulk concurrently for improving the performance of flexible device. The results show that In doping effectively inhibits the formation of secondary phase (Cu(S,Se)<sub>2</sub>) and V<sub>Sn</sub> defects. Further studies demonstrate that the barrier height at the back interface is decreased and the deep level defects (Cu<sub>Sn</sub> defects) in CZTSSe bulk are passivated. Moreover, the carrier concentration is increased and the <em>V</em><sub>OC</sub> deficit (<em>V</em><sub>OC,def</sub>) is decreased significantly due to In doping. Finally, the flexible CZTSSe solar cell with 10.01% power conversion efficiency (PCE) has been obtained. The synergistic strategy of interface modification and bulk defects passivation through In incorporation provides a new thought for the fabrication of efficient flexible kesterite-based solar cells.</p></div>\",\"PeriodicalId\":67498,\"journal\":{\"name\":\"能源化学\",\"volume\":\"89 \",\"pages\":\"Pages 10-17\"},\"PeriodicalIF\":14.0000,\"publicationDate\":\"2023-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"能源化学\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S2095495623006046\",\"RegionNum\":1,\"RegionCategory\":\"化学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q1\",\"JCRName\":\"CHEMISTRY, APPLIED\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"能源化学","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2095495623006046","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, APPLIED","Score":null,"Total":0}
In-doping collaboratively controlling back interface and bulk defects to achieve efficient flexible CZTSSe solar cells
Focusing on the low open circuit voltage (VOC) and fill factor (FF) in flexible Cu2ZnSn(S,Se)4 (CZTSSe) solar cells, indium (In) ions are introduced into the CZTSSe absorbers near Mo foils to modify the back interface and passivate deep level defects in CZTSSe bulk concurrently for improving the performance of flexible device. The results show that In doping effectively inhibits the formation of secondary phase (Cu(S,Se)2) and VSn defects. Further studies demonstrate that the barrier height at the back interface is decreased and the deep level defects (CuSn defects) in CZTSSe bulk are passivated. Moreover, the carrier concentration is increased and the VOC deficit (VOC,def) is decreased significantly due to In doping. Finally, the flexible CZTSSe solar cell with 10.01% power conversion efficiency (PCE) has been obtained. The synergistic strategy of interface modification and bulk defects passivation through In incorporation provides a new thought for the fabrication of efficient flexible kesterite-based solar cells.