用隔离粒子愈合提高硅涂层的抗氧化性

Lin Chen , Jia-Hui Li , Guo-Qiang Wang , You-Feng Bo , Guan-Jun Yang
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引用次数: 4

摘要

大气等离子喷涂致密硅涂层具有优异的耐高温氧化性能。然而,涂层表面大量孤立的球形颗粒导致快速氧化和较大的局部TGO厚度。在本研究中,提出了分离颗粒愈合(IPH)治疗来消除这些分离颗粒。然后,研究了Si涂层的相关结构演变和氧化动力学。最后,对氧化氧化后TGO的失效机理进行了分析。结果表明,IPH处理使分离颗粒扩散、连接并浸入到本体涂层表面,有利于表面光滑和涂层致密化。因此,消除了局部大厚度的TGO涂层,与喷涂涂层相比,IPH Si涂层的总体氧化速率降低了~ 24%。多晶方石的β→α相变(体积减小~ 4.5%)是导致TGO通道开裂的主要原因,且不受IPH处理的抑制,这为制备更好的抗氧化硅涂层指明了方向。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Improving oxidation resistance of Si coating by isolated-particle healing

Atmospheric plasma sprayed dense Si coatings have excellent potential for high-temperature oxidation resistance. However, numerous isolated spherical particles on the coating surface result in rapid oxidation and a large local TGO thickness. In the present study, isolated particle healing (IPH) treatment was proposed to eliminate these isolated particles. Then, the related structure evolution and oxidation kinetics of Si coatings were investigated. Finally, the failure mechanism of TGO after oxidation was identified. The results show that the IPH treatment makes isolated particles diffuse, connect with and then immerse themselves into the bulk coating surface, thereby contributing to both surface smoothing and coating densification. Consequently, the localized large thickness in the TGO scale is eliminated, and the overall oxidation rates of the IPH Si coating decrease by ∼24% compared with the as-sprayed coating. The βα phase transformation of polymorphic cristobalite with a volume reduction of ∼4.5% is the main cause for TGO channel cracking and is not suppressed by IPH treatment, which points out future directions for better antioxidant Si coatings.

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CiteScore
7.30
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